TTX2302
MOSFET. Datasheet pdf. Equivalent
Type Designator: TTX2302
Marking Code: 2302
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0235
Ohm
Package:
SOT23
TTX2302
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTX2302
Datasheet (PDF)
..1. Size:247K cn wuxi unigroup
ttx2302.pdf
TTX2302Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company20V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking a
0.1. Size:697K cn wuxi unigroup
ttx2302a.pdf
TTX2302A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 3.7A Low Gate Charge RDS(ON) (at VGS =10V)
8.1. Size:712K cn wuxi unigroup
ttx2305a.pdf
TTX2305A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS -20V Trench Power technology ID (at VGS =-10V) -4.5A Low RDS(ON) RDS(ON) (at VGS =-10V)
8.2. Size:728K cn wuxi unigroup
ttx2301a.pdf
TTX2301A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -20V Low RDS(ON) ID (at VGS =-4.5V) -2.6A Low Gate Charge RDS(ON) (at VGS =-10V)
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