TTX2302 Spec and Replacement
Type Designator: TTX2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm
Package: SOT23
TTX2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTX2302 Specs
ttx2302.pdf
TTX2302 Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 20V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking a... See More ⇒
ttx2302a.pdf
TTX2302A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 3.7A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒
ttx2305a.pdf
TTX2305A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS -20V Trench Power technology ID (at VGS =-10V) -4.5A Low RDS(ON) RDS(ON) (at VGS =-10V) ... See More ⇒
ttx2301a.pdf
TTX2301A Wuxi Unigroup Microelectronics CO.,LTD. 20V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -20V Low RDS(ON) ID (at VGS =-4.5V) -2.6A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒
Detailed specifications: TTG65N10A , TTG90P03ATC , TTJ12P03AT , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A , AO3400A , TTX2302A , TTX2305A , TTX2312A , TTX2N7002KA , TTX3401A , VBB1630 , VBC6N2014 , VBC6N2022 .
Keywords - TTX2302 MOSFET specs
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