FDB8832F085 Datasheet. Specs and Replacement

Type Designator: FDB8832F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: TO263 D2PAK

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FDB8832F085 datasheet

 7.1. Size:295K  fairchild semi
fdb8832.pdf pdf_icon

FDB8832F085

September 2006 FDB8832 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1m Features Applications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Conver... See More ⇒

 7.2. Size:397K  fairchild semi
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FDB8832F085

May 2010 FDB8832_F085 N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1m Features Applications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Convert... See More ⇒

 7.3. Size:288K  inchange semiconductor
fdb8832.pdf pdf_icon

FDB8832F085

isc N-Channel MOSFET Transistor FDB8832 FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =1.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

Detailed specifications: FDB8444, FDB8444F085, FDB8445, FDB8445F085, FDB8447L, FDB8453LZ, FDB8832, STU313D, 60N06, STU314D, FDB8860, STU320S, FDB8860F085, STU310DH, FDB8870, STU30N15, FDB8870F085

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