FDB8832F085 Datasheet and Replacement
Type Designator: FDB8832F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 204 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TO263 D2PAK
FDB8832F085 substitution
FDB8832F085 Datasheet (PDF)
fdb8832.pdf

September 2006FDB8832 N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.1m FeaturesApplications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Conver
fdb8832 f085.pdf

May 2010FDB8832_F085 N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.1m FeaturesApplications Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A 12V Automotive Load Control Typ Qg(5) = 100nC at VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Convert
fdb8832.pdf

isc N-Channel MOSFET Transistor FDB8832FEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =1.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Datasheet: FDB8444 , FDB8444F085 , FDB8445 , FDB8445F085 , FDB8447L , FDB8453LZ , FDB8832 , STU313D , RU6888R , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , FDB8870F085 .
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