VBE1606 Datasheet. Specs and Replacement
Type Designator: VBE1606 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 441 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm
Package: TO252
📄📄 Copy
VBE1606 substitution
- MOSFET ⓘ Cross-Reference Search
VBE1606 datasheet
vbe1606.pdf
VBE1606 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C... See More ⇒
vbe1695.pdf
VBE1695 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒
vbe1615.pdf
VBE1615 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U... See More ⇒
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf
VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r... See More ⇒
Detailed specifications: VBE1206, VBE1206N, VBE1302, VBE1303, VBE1307, VBE1310, VBE1405, VBE1410, IRFB4110, VBE1615, VBE1638, VBE165R02, VBE165R04, VBE1695, VBE1806, VBE2102M, VBFB2102M
Keywords - VBE1606 MOSFET specs
VBE1606 cross reference
VBE1606 equivalent finder
VBE1606 pdf lookup
VBE1606 substitution
VBE1606 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: STD8N10LT4 | GP2M010A060X | IRFSL3306 | FDD5N50U | IXFH70N20Q3 | STH26N25 | AGM13T30A
🌐 : EN ES РУ
LIST
Last Update
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D
Popular searches
c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor
