STU320S PDF Specs and Replacement
Type Designator: STU320S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252 DPAK
STU320S substitution
STU320S PDF Specs
stu320s std320s.pdf
STU/D320S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 20 @ VGS=10V 30V 30A TO-252 and TO-251 Package. 29 @ VGS=4.5V ESD Protected. D D G G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ... See More ⇒
stu328s std328s.pdf
Gree r r P Pr Pr Pro STU/D328S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 4.9 @ VGS=10V TO-252 and TO-251 Package. 58A 30V 7.2 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK... See More ⇒
stu326s std326s.pdf
Gre r r P Pr Pr Pro STU/D326S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 6.3 @ VGS=10V TO-252 and TO-251 Package. 52A 30V 9.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK... See More ⇒
Detailed specifications: FDB8445F085 , FDB8447L , FDB8453LZ , FDB8832 , STU313D , FDB8832F085 , STU314D , FDB8860 , IRF1405 , FDB8860F085 , STU310DH , FDB8870 , STU30N15 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A .
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