All MOSFET. VBE165R02 Datasheet

 

VBE165R02 Datasheet and Replacement


   Type Designator: VBE165R02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8(typ) Ohm
   Package: TO252
 

 VBE165R02 substitution

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VBE165R02 Datasheet (PDF)

 ..1. Size:1082K  cn vbsemi
vbe165r02.pdf pdf_icon

VBE165R02

VBE165R02www.VBsemi.comN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to Ro

 6.1. Size:932K  cn vbsemi
vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf pdf_icon

VBE165R02

VBM165R07 / VBMB165R07VBE165R07 / VBFB165R07www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy r

 6.2. Size:984K  cn vbsemi
vbe165r04.pdf pdf_icon

VBE165R02

VBE165R04 www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH

 6.3. Size:921K  cn vbsemi
vbm165r07s vbmb165r07s vbe165r07s vbfb165r07s.pdf pdf_icon

VBE165R02

VBM165R07S / VBMB165R07SVBE165R07S / VBFB165R07Swww.VBsemi.comN hannel 650 D S Super Junc n Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.7 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0

Datasheet: VBE1303 , VBE1307 , VBE1310 , VBE1405 , VBE1410 , VBE1606 , VBE1615 , VBE1638 , IRFP260N , VBE165R04 , VBE1695 , VBE1806 , VBE2102M , VBFB2102M , VBE2104N , VBE2305 , VBE2309 .

History: PE532DY | OSG60R1K8PF

Keywords - VBE165R02 MOSFET datasheet

 VBE165R02 cross reference
 VBE165R02 equivalent finder
 VBE165R02 lookup
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