All MOSFET. VBFB2102M Datasheet

 

VBFB2102M Datasheet and Replacement


   Type Designator: VBFB2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
   Package: TO252
 

 VBFB2102M substitution

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VBFB2102M Datasheet (PDF)

 ..1. Size:637K  cn vbsemi
vbfb2102m.pdf pdf_icon

VBFB2102M

VBFB2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/

 ..2. Size:575K  cn vbsemi
vbe2102m vbfb2102m.pdf pdf_icon

VBFB2102M

VBE2102M/VBFB2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 P

 9.1. Size:512K  cn vbsemi
vbfb2658.pdf pdf_icon

VBFB2102M

VBFB2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bri

 9.2. Size:623K  cn vbsemi
vbfb2412.pdf pdf_icon

VBFB2102M

VBFB2412www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.010 at VGS = - 10 V 55RoHS*- 40COMPLIANT0.014 at VGS = - 4.5 V 54TO-251SGG D SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Unit

Datasheet: VBE1606 , VBE1615 , VBE1638 , VBE165R02 , VBE165R04 , VBE1695 , VBE1806 , VBE2102M , AON6414A , VBE2104N , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 , VBE2509 .

History: 25N10G-TM3-T | APT4080BN

Keywords - VBFB2102M MOSFET datasheet

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 VBFB2102M equivalent finder
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