VBFB2102M PDF and Equivalents Search

 

VBFB2102M PDF Specs and Replacement


   Type Designator: VBFB2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
   Package: TO252
 

 VBFB2102M substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBFB2102M PDF Specs

 ..1. Size:637K  cn vbsemi
vbfb2102m.pdf pdf_icon

VBFB2102M

VBFB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11 0.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/... See More ⇒

 ..2. Size:575K  cn vbsemi
vbe2102m vbfb2102m.pdf pdf_icon

VBFB2102M

VBE2102M/VBFB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 P... See More ⇒

 9.1. Size:512K  cn vbsemi
vbfb2658.pdf pdf_icon

VBFB2102M

VBFB2658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bri... See More ⇒

 9.2. Size:623K  cn vbsemi
vbfb2412.pdf pdf_icon

VBFB2102M

VBFB2412 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.010 at VGS = - 10 V 55 RoHS* - 40 COMPLIANT 0.014 at VGS = - 4.5 V 54 TO-251 S G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit ... See More ⇒

Detailed specifications: VBE1606 , VBE1615 , VBE1638 , VBE165R02 , VBE165R04 , VBE1695 , VBE1806 , VBE2102M , IRFB4227 , VBE2104N , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 , VBE2509 .

Keywords - VBFB2102M MOSFET specs

 VBFB2102M cross reference
 VBFB2102M equivalent finder
 VBFB2102M pdf lookup
 VBFB2102M substitution
 VBFB2102M replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.