All MOSFET. VBE2104N Datasheet

 

VBE2104N Datasheet and Replacement


   Type Designator: VBE2104N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033(typ) Ohm
   Package: TO252
 

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VBE2104N Datasheet (PDF)

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 vbe2104n.pdf pdf_icon

VBE2104N

VBE2104Nwww.VBsemi.com P-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directiv

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 vbe2102m vbfb2102m.pdf pdf_icon

VBE2104N

VBE2102M/VBFB2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 P

Datasheet: VBE1615 , VBE1638 , VBE165R02 , VBE165R04 , VBE1695 , VBE1806 , VBE2102M , VBFB2102M , P55NF06 , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 , VBE2509 , VBE2610N .

History: APT4080BN | 25N10G-TM3-T

Keywords - VBE2104N MOSFET datasheet

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