VBE2104N Datasheet. Specs and Replacement

Type Designator: VBE2104N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 301 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 typ Ohm

Package: TO252

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VBE2104N datasheet

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VBE2104N

VBE2104N www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directiv... See More ⇒

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 vbe2102m vbfb2102m.pdf pdf_icon

VBE2104N

VBE2102M/VBFB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 P... See More ⇒

Detailed specifications: VBE1615, VBE1638, VBE165R02, VBE165R04, VBE1695, VBE1806, VBE2102M, VBFB2102M, 8205A, VBE2305, VBE2309, VBE2311, VBE2317, VBE2338, VBE2412, VBE2509, VBE2610N

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