VBE2509 Datasheet. Specs and Replacement

Type Designator: VBE2509  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 272 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: TO252

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VBE2509 datasheet

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VBE2509

VBE2509 www.VBsemi.com P-Channel 50 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -50 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.016 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle... See More ⇒

Detailed specifications: VBFB2102M, VBE2104N, VBE2305, VBE2309, VBE2311, VBE2317, VBE2338, VBE2412, 7N65, VBE2610N, VBE2625, VBE2658, VBE3310, VBE5415, VBE5638, VBF2355, VBFB1101M

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