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VBE2509 PDF Specs and Replacement


   Type Designator: VBE2509
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 272 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
   Package: TO252
 

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VBE2509 PDF Specs

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VBE2509

VBE2509 www.VBsemi.com P-Channel 50 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -50 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.016 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle... See More ⇒

Detailed specifications: VBFB2102M , VBE2104N , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 , 7N65 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , VBE5415 , VBE5638 , VBF2355 , VBFB1101M .

Keywords - VBE2509 MOSFET specs

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