All MOSFET. VBE2509 Datasheet

 

VBE2509 Datasheet and Replacement


   Type Designator: VBE2509
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 272 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
   Package: TO252
 

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VBE2509 Datasheet (PDF)

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VBE2509

VBE2509www.VBsemi.comP-Channel 50 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -50 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.016ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

Datasheet: VBFB2102M , VBE2104N , VBE2305 , VBE2309 , VBE2311 , VBE2317 , VBE2338 , VBE2412 , STP75NF75 , VBE2610N , VBE2625 , VBE2658 , VBE3310 , VBE5415 , VBE5638 , VBF2355 , VBFB1101M .

History: CEB6086 | AP60WN2K3H

Keywords - VBE2509 MOSFET datasheet

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