All MOSFET. VBI2658 Datasheet

 

VBI2658 Datasheet and Replacement


   Type Designator: VBI2658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058(typ) Ohm
   Package: SOT89
 

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VBI2658 Datasheet (PDF)

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VBI2658

VBI2658www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol L

Datasheet: VBFB2412 , VBFB2610N , VBFB2658 , VBI1101M , VBI1322 , VBI1638 , VBI1695 , VBI2338 , IRF1407 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 .

History: MTP3413N3 | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

Keywords - VBI2658 MOSFET datasheet

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