VBI2658 Datasheet. Specs and Replacement

Type Designator: VBI2658  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 typ Ohm

Package: SOT89

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VBI2658 datasheet

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VBI2658

VBI2658 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.058 at VGS = - 10 V - 6.5 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 5.5 Load Switch S D G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol L... See More ⇒

Detailed specifications: VBFB2412, VBFB2610N, VBFB2658, VBI1101M, VBI1322, VBI1638, VBI1695, VBI2338, NCEP15T14, VBJ1101M, VBJ1201K, VBJ1322, VBJ1638, VBJ1695, VBJ2102M, VBJ2456, VBJ2658

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