All MOSFET. VBJ1322 Datasheet

 

VBJ1322 Datasheet and Replacement


   Type Designator: VBJ1322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: SOT223
 

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VBJ1322 Datasheet (PDF)

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VBJ1322

VBJ1322www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA

Datasheet: VBI1101M , VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , 18N50 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 .

History: 2N7002BKT | PSMN5R0-100ES | 2SK3067 | JCS7N95SA | IRF1405ZS | AOD502 | FDS7064N

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