VBJ1638 Datasheet and Replacement
Type Designator: VBJ1638
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028(typ) Ohm
Package: SOT223
VBJ1638 substitution
VBJ1638 Datasheet (PDF)
vbj1638.pdf
VBJ1638www.VBsemi.com N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET
vbj1695.pdf
VBJ1695www.VBsemi.com N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unles
Datasheet: VBI1322 , VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , 2SK3568 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N .
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