All MOSFET. VBJ1695 Datasheet

 

VBJ1695 Datasheet and Replacement


   Type Designator: VBJ1695
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076(typ) Ohm
   Package: SOT223
 

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VBJ1695 Datasheet (PDF)

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VBJ1695

VBJ1695www.VBsemi.com N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unles

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VBJ1695

VBJ1638www.VBsemi.com N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

Datasheet: VBI1638 , VBI1695 , VBI2338 , VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , STF13NM60N , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K .

History: BF256B | AUIRFS8408 | NVMFS5C410N | SI7892BDP | STD6N65M2 | 7N65G-TF2-T | SM140R50CT1TL

Keywords - VBJ1695 MOSFET datasheet

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