All MOSFET. VBJ2658 Datasheet

 

VBJ2658 Datasheet and Replacement


   Type Designator: VBJ2658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
   Package: SOT223
 

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VBJ2658 Datasheet (PDF)

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VBJ2658

VBJ2658www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet

Datasheet: VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , STP80NF70 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 .

History: SI4532ADY-T1 | AO3451 | SML1004R2CN | 2SK2112 | IRLR8743PBF | IPP80R750P7 | IXTQ470P2

Keywords - VBJ2658 MOSFET datasheet

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