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VBJ2658 PDF Specs and Replacement


   Type Designator: VBJ2658
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
   Package: SOT223
 

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VBJ2658 PDF Specs

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VBJ2658

VBJ2658 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramet... See More ⇒

Detailed specifications: VBI2658 , VBJ1101M , VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , 10N65 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 .

Keywords - VBJ2658 MOSFET specs

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