VBK162K Datasheet and Replacement
Type Designator: VBK162K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT323
VBK162K substitution
VBK162K Datasheet (PDF)
vbk162k.pdf

VBK162Kwww.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-323 Low Input and Output LeakageSC-70 (3-LEADS) TrenchFET
Datasheet: VBJ1201K , VBJ1322 , VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , SKD502T , VBK2298 , VBK3215N , VBK362K , VBK4223N , VBK5213N , VBK8238 , VBL1101M , VBL1101N .
History: JCS9N95CA | STD5N95K3 | NCEAP40T15AGU | LND250 | AP4434AGYT-HF | IPS60R280PFD7S | NCE60R360
Keywords - VBK162K MOSFET datasheet
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History: JCS9N95CA | STD5N95K3 | NCEAP40T15AGU | LND250 | AP4434AGYT-HF | IPS60R280PFD7S | NCE60R360



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