All MOSFET. VBK3215N Datasheet

 

VBK3215N Datasheet and Replacement


   Type Designator: VBK3215N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086(typ) Ohm
   Package: SOT363
 

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VBK3215N Datasheet (PDF)

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VBK3215N

VBK3215Nwww.VBsemi.comDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv

Datasheet: VBJ1638 , VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , 7N60 , VBK362K , VBK4223N , VBK5213N , VBK8238 , VBL1101M , VBL1101N , VBL1104N , VBL1105 .

History: IRF7807VD1PBF-1 | DMP4025LSD | P0903BT | CHM9433JGP | AP3N1R0MT | 2SK1933 | NTLJF3117PT1G

Keywords - VBK3215N MOSFET datasheet

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