VBK3215N MOSFET. Datasheet pdf. Equivalent
Type Designator: VBK3215N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 80 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086(typ) Ohm
Package: SOT363
VBK3215N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBK3215N Datasheet (PDF)
..1. Size:567K cn vbsemi
vbk3215n.pdf
vbk3215n.pdf
VBK3215Nwww.VBsemi.comDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv
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