VBK362K Specs and Replacement

Type Designator: VBK362K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 typ Ohm

Package: SOT363

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VBK362K datasheet

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VBK362K

VBK362K www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( )ID (mA) Halogen-free According to IEC 61249-2-21 Definition 2.5 at VGS = 10 V 60 300 Low On-Resistance 2.5 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns SOT-363 Low Input and Output Leakage SC-70 TrenchFET ... See More ⇒

Detailed specifications: VBJ1695, VBJ2102M, VBJ2456, VBJ2658, VBK1270, VBK162K, VBK2298, VBK3215N, 18N50, VBK4223N, VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N, VBL1105, VBL1154N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.