VBK362K Datasheet and Replacement
Type Designator: VBK362K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5(typ) Ohm
Package: SOT363
VBK362K substitution
VBK362K Datasheet (PDF)
vbk362k.pdf

VBK362Kwww.VBsemi.comDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (mA) Halogen-free According to IEC 61249-2-21 Definition2.5 at VGS = 10 V60 300Low On-Resistance:2.5 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-363 Low Input and Output LeakageSC-70 TrenchFET
Datasheet: VBJ1695 , VBJ2102M , VBJ2456 , VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , 75N75 , VBK4223N , VBK5213N , VBK8238 , VBL1101M , VBL1101N , VBL1104N , VBL1105 , VBL1154N .
History: SJMN180R65CF | UT3N06G-TM3-T | KIA4N60H-252 | D5N65-XAD | AP25N10GH | SSF4604 | HMS17N65F
Keywords - VBK362K MOSFET datasheet
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History: SJMN180R65CF | UT3N06G-TM3-T | KIA4N60H-252 | D5N65-XAD | AP25N10GH | SSF4604 | HMS17N65F



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