All MOSFET. VBK8238 Datasheet

 

VBK8238 Datasheet and Replacement


   Type Designator: VBK8238
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT363
 

 VBK8238 substitution

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VBK8238 Datasheet (PDF)

 ..1. Size:1041K  cn vbsemi
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VBK8238

001VBK8238www.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET- 20 0.054 at VGS = - 2.5 V - 4 12.5 nC 100 % Rg Tested0.100 at VGS = - 1.8 V - 4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: VBJ2658 , VBK1270 , VBK162K , VBK2298 , VBK3215N , VBK362K , VBK4223N , VBK5213N , IRF2807 , VBL1101M , VBL1101N , VBL1104N , VBL1105 , VBL1154N , VBL1203M , VBL1310 , VBL1405 .

History: IPW50R299CP

Keywords - VBK8238 MOSFET datasheet

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