VBL1203M Specs and Replacement
Type Designator: VBL1203M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO263
VBL1203M substitution
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VBL1203M datasheet
vbl1203m.pdf
VBL1203M www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.30 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Sim... See More ⇒
Detailed specifications: VBK4223N, VBK5213N, VBK8238, VBL1101M, VBL1101N, VBL1104N, VBL1105, VBL1154N, 75N75, VBL1310, VBL1405, VBL1603, VBL1615, VBL1632, VBL165R04, VBL165R18, VBL1806
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