All MOSFET. VBL1405 Datasheet

 

VBL1405 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBL1405
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 53.5 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm
   Package: TO263

 VBL1405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBL1405 Datasheet (PDF)

 ..1. Size:606K  cn vbsemi
 vbl1405.pdf

VBL1405 VBL1405

VBL1405www.VBsemi.comN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please see DTO-263GSSSDDGG

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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