All MOSFET. VBL1806 Datasheet

 

VBL1806 Datasheet and Replacement


   Type Designator: VBL1806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065(typ) Ohm
   Package: TO263
 

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VBL1806 Datasheet (PDF)

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VBL1806

VBL1806www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0065 at VGS = 10 V 12080 53.5 nC 100 % Rg and UIS tested0.0010 at VGS = 7.5 V 110 Material categorization:for definitions of compliance please see DTO-263GSSSDD

Datasheet: VBL1203M , VBL1310 , VBL1405 , VBL1603 , VBL1615 , VBL1632 , VBL165R04 , VBL165R18 , IRF1405 , VBL2309 , VBL2610N , VBL2625 , VBL2658 , VBM1101M , VBM1101N , VBM1102N , VBM1104N .

History: NTLUS3A18PZTAG | FQD7P06TF | AP4453GYT | TPCA8027-H | SPA06N80C3 | SSF2610E | HTD035N03

Keywords - VBL1806 MOSFET datasheet

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