All MOSFET. VBL1806 Datasheet

 

VBL1806 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBL1806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 53.5 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065(typ) Ohm
   Package: TO263

 VBL1806 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBL1806 Datasheet (PDF)

 ..1. Size:600K  cn vbsemi
 vbl1806.pdf

VBL1806 VBL1806

VBL1806www.VBsemi.comN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0065 at VGS = 10 V 12080 53.5 nC 100 % Rg and UIS tested0.0010 at VGS = 7.5 V 110 Material categorization:for definitions of compliance please see DTO-263GSSSDD

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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