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VBL1806 Specs and Replacement

Type Designator: VBL1806

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 1395 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 typ Ohm

Package: TO263

VBL1806 substitution

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VBL1806 datasheet

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 vbl1806.pdf pdf_icon

VBL1806

VBL1806 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0065 at VGS = 10 V 120 80 53.5 nC 100 % Rg and UIS tested 0.0010 at VGS = 7.5 V 110 Material categorization for definitions of compliance please see D TO-263 G S S S D D ... See More ⇒

Detailed specifications: VBL1203M , VBL1310 , VBL1405 , VBL1603 , VBL1615 , VBL1632 , VBL165R04 , VBL165R18 , IRF830 , VBL2309 , VBL2610N , VBL2625 , VBL2658 , VBM1101M , VBM1101N , VBM1102N , VBM1104N .

Keywords - VBL1806 MOSFET specs

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