VBM1151N Specs and Replacement

Type Designator: VBM1151N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 114 nS

Cossⓘ - Output Capacitance: 535 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 typ Ohm

Package: TO220AB

VBM1151N substitution

- MOSFET ⓘ Cross-Reference Search

 

VBM1151N datasheet

 ..1. Size:500K  cn vbsemi
vbm1151n.pdf pdf_icon

VBM1151N

VBM1151N www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0085 at VGS = 10 V 100 150 60 nC 100 % Rg and UIS tested 0.0095 at VGS = 7.5 V 98 APPLICATIONS TO-220AB D Power supplies - Uninterruptible power supplies - AC/DC switch-... See More ⇒

 8.1. Size:703K  cn vbsemi
vbm1158n.pdf pdf_icon

VBM1151N

VBM1158N www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise not... See More ⇒

 9.1. Size:469K  cn vbsemi
vbm1102n.pdf pdf_icon

VBM1151N

VBM1102N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE M... See More ⇒

 9.2. Size:1080K  cn vbsemi
vbm1101n vbl1101n.pdf pdf_icon

VBM1151N

VBM1101N/VBL1101N www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Ch... See More ⇒

Detailed specifications: VBL2610N, VBL2625, VBL2658, VBM1101M, VBM1101N, VBM1102N, VBM1104N, VBM1105, AO4407A, VBM1158N, VBM1201K, VBM1201M, VBM1202M, VBM1203M, VBM1206, VBM1208N, VBM1302

Keywords - VBM1151N MOSFET specs

 VBM1151N cross reference

 VBM1151N equivalent finder

 VBM1151N pdf lookup

 VBM1151N substitution

 VBM1151N replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.