All MOSFET. VBM1203M Datasheet

 

VBM1203M MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBM1203M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.270(typ) Ohm
   Package: TO220AB

 VBM1203M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBM1203M Datasheet (PDF)

 ..1. Size:595K  cn vbsemi
 vbm1203m.pdf

VBM1203M VBM1203M

VBM1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RA

 8.1. Size:502K  cn vbsemi
 vbm1208n.pdf

VBM1203M VBM1203M

VBM1208Nwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDG

 8.2. Size:810K  cn vbsemi
 vbm1206.pdf

VBM1203M VBM1203M

VBM1206www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)a 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004@ VGS = 4.5 V10020200.005@ VGS = 2.5 V 95APPLICATIONS OR-ingTO-220AB Server DC/DCDGG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RAT

 8.3. Size:1415K  cn vbsemi
 vbm1201k.pdf

VBM1203M VBM1203M

VBM1201Kwww.VBsemi.comN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DG

 8.4. Size:789K  cn vbsemi
 vbm1201m.pdf

VBM1203M VBM1203M

VBM1201Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-C

 8.5. Size:750K  cn vbsemi
 vbm1202m.pdf

VBM1203M VBM1203M

VBM1202Mwww.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.20 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperatureQgd (nC) 39 Fast switchingConfiguration Single Fully avalanche ratedTO-220ABDGDRAIN

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VBH40-05B

 

 
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