All MOSFET. VBM15R13 Datasheet

 

VBM15R13 Datasheet and Replacement


   Type Designator: VBM15R13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.660(typ) Ohm
   Package: TO220AB
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VBM15R13 Datasheet (PDF)

 ..1. Size:665K  cn vbsemi
 vbm15r13.pdf pdf_icon

VBM15R13

VBM15R13www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81Ruggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian

 8.1. Size:796K  cn vbsemi
 vbm15r08.pdf pdf_icon

VBM15R13

VBM15R08www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500requirementRDS(on) ()VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20and currentConfiguration SingleDT

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: UPA2756GR | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | IXTA08N120P | STD6N60M2

Keywords - VBM15R13 MOSFET datasheet

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