VBM15R13 Specs and Replacement
Type Designator: VBM15R13
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.660 typ Ohm
Package: TO220AB
VBM15R13 substitution
- MOSFET ⓘ Cross-Reference Search
VBM15R13 datasheet
vbm15r13.pdf
VBM15R13 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements RDS(on) ( )VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single Complian... See More ⇒
vbm15r08.pdf
VBM15R08 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 500 requirement RDS(on) ( )VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single D T... See More ⇒
Detailed specifications: VBM1302, VBM1303, VBM1307, VBL1307, VBM1310, VBM1402, VBM1405, VBM15R08, IRF1404, VBM1603, VBM1606, VBM1615, VBM1638, VBM165R02, VBM165R04, VBM165R07, VBMB165R07
Keywords - VBM15R13 MOSFET specs
VBM15R13 cross reference
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VBM15R13 substitution
VBM15R13 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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