All MOSFET. VBM17R10 Datasheet

 

VBM17R10 Datasheet and Replacement


   Type Designator: VBM17R10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.97(typ) Ohm
   Package: TO220AB
 

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VBM17R10 Datasheet (PDF)

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VBM17R10

VBM17R10www.VBsemi.comN hannel 700 D S ower MOSFET PFEATURESPRODUCT SUMMARYVDS (V) 700 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.97 Reduced switching and conduction lossesQg max. (nC)40 Ultra low gate charge (Qg)Qgs (nC)4 Avalanche energy rated (UIS)Qgd (nC)20Configuration Sin

Datasheet: VBMB16R02 , VBE16R02 , VBFB16R02 , VBM16R04 , VBMB16R04 , VBE16R04 , VBFB16R04 , VBM16R08 , IRLZ44N , VBM1806 , VBM1808 , VBM18R15S , VBMB18R15S , VBP18R15S , VBM2102M , VBM2309 , VBM2610N .

History: 5N65KG-TMS-T | NTMFS0D55N03CG | SLF65R300S2 | SVS11N70SD2 | STE140NF20D | RJK0391DPA | SRC60R950E

Keywords - VBM17R10 MOSFET datasheet

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