VBM17R10 Specs and Replacement

Type Designator: VBM17R10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.97 typ Ohm

Package: TO220AB

VBM17R10 substitution

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VBM17R10 datasheet

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VBM17R10

VBM17R10 www.VBsemi.com N hannel 700 D S ower MOSFET P FEATURES PRODUCT SUMMARY VDS (V) 700 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.97 Reduced switching and conduction losses Qg max. (nC) 40 Ultra low gate charge (Qg) Qgs (nC) 4 Avalanche energy rated (UIS) Qgd (nC) 20 Configuration Sin... See More ⇒

Detailed specifications: VBMB16R02, VBE16R02, VBFB16R02, VBM16R04, VBMB16R04, VBE16R04, VBFB16R04, VBM16R08, AON6380, VBM1806, VBM1808, VBM18R15S, VBMB18R15S, VBP18R15S, VBM2102M, VBM2309, VBM2610N

Keywords - VBM17R10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs