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FDC2612 Specs and Replacement

Type Designator: FDC2612

Marking Code: .262'

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 8 nC

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 18 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.725 Ohm

Package: SSOT6

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FDC2612 datasheet

 ..1. Size:201K  fairchild semi
 fdc2612.pdf pdf_icon

FDC2612

February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.1 A, 200 V. RDS(ON) = 725 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers... See More ⇒

Detailed specifications: STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , FDC2512 , AO4407A , STU309D , FDC3512 , FDC3535 , FDC3601N , STU307S , FDC3612 , STU3055L , FDC365P .

History: STU309D

Keywords - FDC2612 MOSFET specs

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