All MOSFET. FDC2612 Datasheet

 

FDC2612 Datasheet and Replacement


   Type Designator: FDC2612
   Marking Code: .262'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.725 Ohm
   Package: SSOT6
 

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FDC2612 Datasheet (PDF)

 ..1. Size:201K  fairchild semi
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FDC2612

February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.1 A, 200 V. RDS(ON) = 725 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers

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