All MOSFET. VBM2102M Datasheet

 

VBM2102M Datasheet and Replacement


   Type Designator: VBM2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 11.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.167(typ) Ohm
   Package: TO220AB
 

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VBM2102M Datasheet (PDF)

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VBM2102M

VBM2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc

Datasheet: VBFB16R04 , VBM16R08 , VBM17R10 , VBM1806 , VBM1808 , VBM18R15S , VBMB18R15S , VBP18R15S , IRF1407 , VBM2309 , VBM2610N , VBM2625 , VBM2658 , VBMB1101M , VBMB1104N , VBMB1203M , VBMB1208N .

History: NCEP02T11T | 2SK1494-Z | NCEP02T10LL | SW4N80B | FTK2N60P

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