All MOSFET. VBM2102M Datasheet

 

VBM2102M Datasheet and Replacement


   Type Designator: VBM2102M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 11.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.167(typ) Ohm
   Package: TO220AB
 

 VBM2102M substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBM2102M Datasheet (PDF)

 ..1. Size:511K  cn vbsemi
 vbm2102m.pdf pdf_icon

VBM2102M

VBM2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.167 at VGS = - 10 V- 18- 100 37 100 % Rg and UIS Tested0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Power Switc

Datasheet: VBFB16R04 , VBM16R08 , VBM17R10 , VBM1806 , VBM1808 , VBM18R15S , VBMB18R15S , VBP18R15S , IRF1407 , VBM2309 , VBM2610N , VBM2625 , VBM2658 , VBMB1101M , VBMB1104N , VBMB1203M , VBMB1208N .

History: NCE60NF055F | H04N60F | WMN30N80M3 | SFF240J | 2SK1008-01 | BUZ83

Keywords - VBM2102M MOSFET datasheet

 VBM2102M cross reference
 VBM2102M equivalent finder
 VBM2102M lookup
 VBM2102M substitution
 VBM2102M replacement

 

 
Back to Top

 


 
.