VBM2102M Specs and Replacement
Type Designator: VBM2102M
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 11.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.167 typ Ohm
Package: TO220AB
VBM2102M substitution
- MOSFET ⓘ Cross-Reference Search
VBM2102M datasheet
vbm2102m.pdf
VBM2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Switc... See More ⇒
Detailed specifications: VBFB16R04, VBM16R08, VBM17R10, VBM1806, VBM1808, VBM18R15S, VBMB18R15S, VBP18R15S, IRFP450, VBM2309, VBM2610N, VBM2625, VBM2658, VBMB1101M, VBMB1104N, VBMB1203M, VBMB1208N
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
