All MOSFET. VBM2309 Datasheet

 

VBM2309 Datasheet and Replacement


   Type Designator: VBM2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: TO220AB
 

 VBM2309 substitution

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VBM2309 Datasheet (PDF)

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VBM2309

VBM2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop View

Datasheet: VBM16R08 , VBM17R10 , VBM1806 , VBM1808 , VBM18R15S , VBMB18R15S , VBP18R15S , VBM2102M , IRFZ24N , VBM2610N , VBM2625 , VBM2658 , VBMB1101M , VBMB1104N , VBMB1203M , VBMB1208N , VBMB1303 .

History: CJAB25P03

Keywords - VBM2309 MOSFET datasheet

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