VBM2309 Specs and Replacement

Type Designator: VBM2309

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 typ Ohm

Package: TO220AB

VBM2309 substitution

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VBM2309 datasheet

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VBM2309

VBM2309 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0092 at VGS = - 10 V - 60 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0128 at VGS = - 4.5 V - 55 APPLICATIONS Load Switch TO-220AB Notebook Adaptor Switch S G G D S Top View... See More ⇒

Detailed specifications: VBM16R08, VBM17R10, VBM1806, VBM1808, VBM18R15S, VBMB18R15S, VBP18R15S, VBM2102M, TK10A60D, VBM2610N, VBM2625, VBM2658, VBMB1101M, VBMB1104N, VBMB1203M, VBMB1208N, VBMB1303

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.