FDC3535 MOSFET Datasheet: P-Ch, 80V, 2.1A. Full specification with pinout and replacement list

FDC3535 Specs and Replacement

   Type Designator: FDC3535
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.183 Ohm
   Package: SSOT6

FDC3535 substitution

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FDC3535 datasheet

..1. Size:243K fairchild semi
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June 2010 FDC3535 P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and High performanc... See More ⇒

..2. Size:1493K onsemi
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April 2015 FDC3535 P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and High performance trenc... See More ⇒

9.1. Size:130K fairchild semi
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February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒

9.2. Size:133K fairchild semi
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