All MOSFET. VBNC1303 Datasheet

 

VBNC1303 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBNC1303
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 98 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 171 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO262

 VBNC1303 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBNC1303 Datasheet (PDF)

 ..1. Size:491K  cn vbsemi
 vbnc1303 vbl1303.pdf

VBNC1303 VBNC1303

VBNC1303 / VBL1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGD

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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