VBNC1303 Specs and Replacement
Type Designator: VBNC1303
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 98 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1725 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO262
VBNC1303 substitution
- MOSFET ⓘ Cross-Reference Search
VBNC1303 datasheet
vbnc1303 vbl1303.pdf
VBNC1303 / VBL1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D ... See More ⇒
Detailed specifications: VBMB165R18, VBMB165R20, VBMB16R08, VBMB17R07, VBMB185R05, VBMB2102M, VBMB2610N, VBMB2658, IRF1405, VBL1303, VBP1104N, VBP15R50S, VBP1606, VBQA1102N, VBQA1302, VBQA1303, VBQA1308
Keywords - VBNC1303 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
