VBP15R50S Specs and Replacement
Type Designator: VBP15R50S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 530 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.080 typ Ohm
Package: SUPER247
VBP15R50S substitution
- MOSFET ⓘ Cross-Reference Search
VBP15R50S datasheet
vbp15r50s.pdf
VBP15R50S www.VBsemi.com N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 350 Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current ... See More ⇒
Detailed specifications: VBMB17R07, VBMB185R05, VBMB2102M, VBMB2610N, VBMB2658, VBNC1303, VBL1303, VBP1104N, IRFZ46N, VBP1606, VBQA1102N, VBQA1302, VBQA1303, VBQA1308, VBQA1402, VBQA1405, VBQA1606
Keywords - VBP15R50S MOSFET specs
VBP15R50S cross reference
VBP15R50S equivalent finder
VBP15R50S pdf lookup
VBP15R50S substitution
VBP15R50S replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
