All MOSFET. VBP15R50S Datasheet

 

VBP15R50S Datasheet and Replacement


   Type Designator: VBP15R50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 530 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.080(typ) Ohm
   Package: SUPER247
 

 VBP15R50S substitution

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VBP15R50S Datasheet (PDF)

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VBP15R50S

VBP15R50Swww.VBsemi.comN-Channel 500V(D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 350RuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

Datasheet: VBMB17R07 , VBMB185R05 , VBMB2102M , VBMB2610N , VBMB2658 , VBNC1303 , VBL1303 , VBP1104N , IRFZ46N , VBP1606 , VBQA1102N , VBQA1302 , VBQA1303 , VBQA1308 , VBQA1402 , VBQA1405 , VBQA1606 .

History: 2SK3430-S | STP95N04

Keywords - VBP15R50S MOSFET datasheet

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