VBP1606 Specs and Replacement
Type Designator: VBP1606
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 710 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 typ Ohm
Package: TO247AC
VBP1606 substitution
- MOSFET ⓘ Cross-Reference Search
VBP1606 datasheet
vbp1606.pdf
VBP1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.007 100 % Rg and UIS tested ID (A) 150 Configuration Single Package TO-247 D TO-247AC G S D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER S... See More ⇒
vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf
VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul... See More ⇒
Detailed specifications: VBMB185R05, VBMB2102M, VBMB2610N, VBMB2658, VBNC1303, VBL1303, VBP1104N, VBP15R50S, IRF830, VBQA1102N, VBQA1302, VBQA1303, VBQA1308, VBQA1402, VBQA1405, VBQA1606, VBQA1638
Keywords - VBP1606 MOSFET specs
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