All MOSFET. VBP1606 Datasheet

 

VBP1606 Datasheet and Replacement


   Type Designator: VBP1606
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007(typ) Ohm
   Package: TO247AC
 

 VBP1606 substitution

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VBP1606 Datasheet (PDF)

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VBP1606

VBP1606www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.007 100 % Rg and UIS testedID (A) 150Configuration SinglePackage TO-247DTO-247ACGSDGN-Channel MOSFET SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER S

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 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf pdf_icon

VBP1606

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

Datasheet: VBMB185R05 , VBMB2102M , VBMB2610N , VBMB2658 , VBNC1303 , VBL1303 , VBP1104N , VBP15R50S , IRF830 , VBQA1102N , VBQA1302 , VBQA1303 , VBQA1308 , VBQA1402 , VBQA1405 , VBQA1606 , VBQA1638 .

History: STP2NK60Z | RTL035N03FRA | SQ3456EV | IPP80N06S2L-11 | RTL030P02TR | RTP315N10F7 | RTF020P02TL

Keywords - VBP1606 MOSFET datasheet

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