All MOSFET. VBQA2305 Datasheet

 

VBQA2305 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQA2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 6.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 31.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004(typ) Ohm
   Package: DFN5X6

 VBQA2305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQA2305 Datasheet (PDF)

 ..1. Size:485K  cn vbsemi
 vbqa2305.pdf

VBQA2305 VBQA2305

VBQA2305www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

 7.1. Size:266K  cn vbsemi
 vbqa2309.pdf

VBQA2305 VBQA2305

VBQA2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Pe

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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