All MOSFET. VBQA2305 Datasheet

 

VBQA2305 Datasheet and Replacement


   Type Designator: VBQA2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004(typ) Ohm
   Package: DFN5X6
 

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VBQA2305 Datasheet (PDF)

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VBQA2305

VBQA2305www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

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VBQA2305

VBQA2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Pe

Datasheet: VBQA1102N , VBQA1302 , VBQA1303 , VBQA1308 , VBQA1402 , VBQA1405 , VBQA1606 , VBQA1638 , HY1906P , VBQA2309 , VBQA3316 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , VBQF2309 .

History: HAT2134H | CSD17309Q3 | DMP2100UCB9 | IRF6646 | RJK03E3DNS | DAC060N120P1 | PA110BEA

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