VBQA3316 Specs and Replacement

Type Designator: VBQA3316

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.020 typ Ohm

Package: SO8

VBQA3316 substitution

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VBQA3316 datasheet

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VBQA3316

VBQA3316 www.VBsemi.com Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 22 TrenchFET Power MOSFET 30 0.023 at VGS = 4.5 V 18 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 D2 D1 S1 6.15 mm 5.15 mm 1 G1 2 S2 3 G2... See More ⇒

Detailed specifications: VBQA1303, VBQA1308, VBQA1402, VBQA1405, VBQA1606, VBQA1638, VBQA2305, VBQA2309, 60N06, VBQF1206, VBQF1303, VBQF1306, VBQF1310, VBQF2120, VBQF2309, VBQG4240, VBQG7313

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.