VBQA3316 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBQA3316
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.020(typ) Ohm
Package: SO8
VBQA3316 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBQA3316 Datasheet (PDF)
vbqa3316.pdf
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VBQA3316www.VBsemi.comDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 22 TrenchFET Power MOSFET300.023 at VGS = 4.5 V 18 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 D2D1S1 6.15 mm 5.15 mm 1G1 2S2 3G2
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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