All MOSFET. VBQA3316 Datasheet

 

VBQA3316 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQA3316
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.020(typ) Ohm
   Package: SO8

 VBQA3316 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQA3316 Datasheet (PDF)

 ..1. Size:705K  cn vbsemi
 vbqa3316.pdf

VBQA3316 VBQA3316

VBQA3316www.VBsemi.comDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 22 TrenchFET Power MOSFET300.023 at VGS = 4.5 V 18 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 D2D1S1 6.15 mm 5.15 mm 1G1 2S2 3G2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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