All MOSFET. VBQA3316 Datasheet

 

VBQA3316 Datasheet and Replacement


   Type Designator: VBQA3316
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.020(typ) Ohm
   Package: SO8
 

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VBQA3316 Datasheet (PDF)

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VBQA3316

VBQA3316www.VBsemi.comDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 22 TrenchFET Power MOSFET300.023 at VGS = 4.5 V 18 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 D2D1S1 6.15 mm 5.15 mm 1G1 2S2 3G2

Datasheet: VBQA1303 , VBQA1308 , VBQA1402 , VBQA1405 , VBQA1606 , VBQA1638 , VBQA2305 , VBQA2309 , AO4468 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , VBQF2309 , VBQG4240 , VBQG7313 .

History: FMV16N50E | NVD4806N | F20W60C3 | CS5N65A3 | TPCA8008-H | NCE70N900I | GSM6424

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