VBQF1303 Specs and Replacement

Type Designator: VBQF1303

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 406 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0040 typ Ohm

Package: DFN3X3EP

VBQF1303 substitution

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VBQF1303 datasheet

 ..1. Size:983K  cn vbsemi
vbqf1303.pdf pdf_icon

VBQF1303

VBQF1303 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control In... See More ⇒

 7.1. Size:1082K  cn vbsemi
vbqf1306.pdf pdf_icon

VBQF1303

VBQF1306 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0045 at VGS = 10 V 40 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC 0.0060 at VGS = 4.5 V 33.3 APPLICATIONS DC/DC Conversion - Low-Side Switch Notebook PC Gaming D DFN 3x3 EP Top View ... See More ⇒

 8.1. Size:1422K  cn vbsemi
vbqf1310.pdf pdf_icon

VBQF1303

VBQF1310 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.010 at V = 10 V 30 GS 100 % Rg and UIS Tested COMPLIANT 30 26.5 nC 0.018 at V = 4.5 V 25 GS APPLICATIONS DC/DC Conversion - Low-Side Switch Notebook PC Gaming D DFN 3x3 EP Top View... See More ⇒

 9.1. Size:493K  cn vbsemi
vbqf1206.pdf pdf_icon

VBQF1303

VBQF1206 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.0055 at VGS = 4.5V 58 20 9.4 nC 0.0057 at VGS = 2.5 V 45 APPLICATIONS High power density DC/DC Synchronous rectification Embedded DC/DC DFN 3x3 EP D Bottom View Top View Top View 1... See More ⇒

Detailed specifications: VBQA1402, VBQA1405, VBQA1606, VBQA1638, VBQA2305, VBQA2309, VBQA3316, VBQF1206, AO4468, VBQF1306, VBQF1310, VBQF2120, VBQF2309, VBQG4240, VBQG7313, VBQG7322, VBQG8238

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