All MOSFET. VBQF2120 Datasheet

 

VBQF2120 Datasheet and Replacement


   Type Designator: VBQF2120
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 865 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015(typ) Ohm
   Package: DFN3X3-8
 

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VBQF2120 Datasheet (PDF)

 ..1. Size:663K  cn vbsemi
 vbqf2120.pdf pdf_icon

VBQF2120

VBQF2120www.VBsemi.comP-Channel 12 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free according to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = - 4.5 V - 25 Ultra Small DFN3x3 Chipscale0.021 at VGS = - 2.5 V - 24 35 nC- 12Packaging Reduces Footprint Area,0.023 at VGS = - 1.8 V - 24Profile (0.62 mm)

 9.1. Size:1232K  cn vbsemi
 vbqf2309.pdf pdf_icon

VBQF2120

VBQF2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.011at VGS = - 10 V -30 TrenchFET Power MOSFET- 30 24 nC Low Thermal Resistance PowerPAK0.018 at VGS = - 4.5V -28Package with Small Size and Low 1.07 mm Profile 100 % Rg and

Datasheet: VBQA1638 , VBQA2305 , VBQA2309 , VBQA3316 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , IRF3205 , VBQF2309 , VBQG4240 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N .

History: 2SK223 | PHD18NQ10T | BSC190N12NS3G | SM6011NSF | IXFT30N40Q | H02N60SI | HFH7N80

Keywords - VBQF2120 MOSFET datasheet

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