VBQF2309 Specs and Replacement
Type Designator: VBQF2309
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 385 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 typ Ohm
Package: DFN3X3EP
VBQF2309 substitution
- MOSFET ⓘ Cross-Reference Search
VBQF2309 datasheet
vbqf2309.pdf
VBQF2309 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e,f Qg (Typ.) ,Typ. Definition 0.011at VGS = - 10 V -30 TrenchFET Power MOSFET - 30 24 nC Low Thermal Resistance PowerPAK 0.018 at VGS = - 4.5V -28 Package with Small Size and Low 1.07 mm Profile 100 % Rg and ... See More ⇒
vbqf2120.pdf
VBQF2120 www.VBsemi.com P-Channel 12 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free according to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.015 at VGS = - 4.5 V - 25 Ultra Small DFN3x3 Chipscale 0.021 at VGS = - 2.5 V - 24 35 nC - 12 Packaging Reduces Footprint Area, 0.023 at VGS = - 1.8 V - 24 Profile (0.62 mm)... See More ⇒
Detailed specifications: VBQA2305, VBQA2309, VBQA3316, VBQF1206, VBQF1303, VBQF1306, VBQF1310, VBQF2120, IRF740, VBQG4240, VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS
Keywords - VBQF2309 MOSFET specs
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