All MOSFET. VBQF2309 Datasheet

 

VBQF2309 Datasheet and Replacement


   Type Designator: VBQF2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 385 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: DFN3X3EP
 

 VBQF2309 substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBQF2309 Datasheet (PDF)

 ..1. Size:1232K  cn vbsemi
 vbqf2309.pdf pdf_icon

VBQF2309

VBQF2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.011at VGS = - 10 V -30 TrenchFET Power MOSFET- 30 24 nC Low Thermal Resistance PowerPAK0.018 at VGS = - 4.5V -28Package with Small Size and Low 1.07 mm Profile 100 % Rg and

 9.1. Size:663K  cn vbsemi
 vbqf2120.pdf pdf_icon

VBQF2309

VBQF2120www.VBsemi.comP-Channel 12 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free according to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = - 4.5 V - 25 Ultra Small DFN3x3 Chipscale0.021 at VGS = - 2.5 V - 24 35 nC- 12Packaging Reduces Footprint Area,0.023 at VGS = - 1.8 V - 24Profile (0.62 mm)

Datasheet: VBQA2305 , VBQA2309 , VBQA3316 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , IRF740 , VBQG4240 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS .

History: FHU2N60A | SM6018NSUB | NCE50NF220K | 2SJ409L | HGI110N10SL | MPSW65M046CFD | APT20M40HVR

Keywords - VBQF2309 MOSFET datasheet

 VBQF2309 cross reference
 VBQF2309 equivalent finder
 VBQF2309 lookup
 VBQF2309 substitution
 VBQF2309 replacement

 

 
Back to Top

 


 
.