All MOSFET. VBQF2309 Datasheet

 

VBQF2309 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQF2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 14.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47.5 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 385 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: DFN3X3EP

 VBQF2309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQF2309 Datasheet (PDF)

 ..1. Size:1232K  cn vbsemi
 vbqf2309.pdf

VBQF2309 VBQF2309

VBQF2309www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.011at VGS = - 10 V -30 TrenchFET Power MOSFET- 30 24 nC Low Thermal Resistance PowerPAK0.018 at VGS = - 4.5V -28Package with Small Size and Low 1.07 mm Profile 100 % Rg and

 9.1. Size:663K  cn vbsemi
 vbqf2120.pdf

VBQF2309 VBQF2309

VBQF2120www.VBsemi.comP-Channel 12 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free according to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = - 4.5 V - 25 Ultra Small DFN3x3 Chipscale0.021 at VGS = - 2.5 V - 24 35 nC- 12Packaging Reduces Footprint Area,0.023 at VGS = - 1.8 V - 24Profile (0.62 mm)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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