VBQG4240 Specs and Replacement

Type Designator: VBQG4240

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

Qg ⓘ - Total Gate Charge: 32 nC

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.040 typ Ohm

Package: DFN2X2

VBQG4240 substitution

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VBQG4240 datasheet

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VBQG4240

VBQG4240 www.VBsemi.com Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.040 at VGS = - 4.5 V - 5.3 100 % UIS Tested RoHS - 20 17 nC COMPLIANT 0.045 at VGS = - 2.5 V - 4.3 APPLICATIONS Load Switches S1 S2 PowerPAK SC-70-6 Dual S1 G1 D2 1 S1 2 G1 G2 G1 3 D1 D2 D1... See More ⇒

Detailed specifications: VBQA2309, VBQA3316, VBQF1206, VBQF1303, VBQF1306, VBQF1310, VBQF2120, VBQF2309, IRF840, VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M

Keywords - VBQG4240 MOSFET specs

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