All MOSFET. VBQG4240 Datasheet

 

VBQG4240 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQG4240
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.040(typ) Ohm
   Package: DFN2X2

 VBQG4240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQG4240 Datasheet (PDF)

 ..1. Size:1212K  cn vbsemi
 vbqg4240.pdf

VBQG4240 VBQG4240

VBQG4240www.VBsemi.comDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = - 4.5 V - 5.3 100 % UIS TestedRoHS- 20 17 nCCOMPLIANT0.045 at VGS = - 2.5 V - 4.3APPLICATIONS Load SwitchesS1 S2 PowerPAK SC-70-6 DualS1 G1D21S12G1 G2 G13D1D2D1

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRFS353 | BL2N50-A

 

 
Back to Top