VBQG4240 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBQG4240
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.040(typ) Ohm
Package: DFN2X2
VBQG4240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBQG4240 Datasheet (PDF)
vbqg4240.pdf
VBQG4240www.VBsemi.comDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = - 4.5 V - 5.3 100 % UIS TestedRoHS- 20 17 nCCOMPLIANT0.045 at VGS = - 2.5 V - 4.3APPLICATIONS Load SwitchesS1 S2 PowerPAK SC-70-6 DualS1 G1D21S12G1 G2 G13D1D2D1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100