All MOSFET. VBQG4240 Datasheet

 

VBQG4240 Datasheet and Replacement


   Type Designator: VBQG4240
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.040(typ) Ohm
   Package: DFN2X2
 

 VBQG4240 substitution

   - MOSFET ⓘ Cross-Reference Search

 

VBQG4240 Datasheet (PDF)

 ..1. Size:1212K  cn vbsemi
 vbqg4240.pdf pdf_icon

VBQG4240

VBQG4240www.VBsemi.comDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = - 4.5 V - 5.3 100 % UIS TestedRoHS- 20 17 nCCOMPLIANT0.045 at VGS = - 2.5 V - 4.3APPLICATIONS Load SwitchesS1 S2 PowerPAK SC-70-6 DualS1 G1D21S12G1 G2 G13D1D2D1

Datasheet: VBQA2309 , VBQA3316 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , VBQF2309 , IRF840 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M .

History: RSE002N06 | AFP2317 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - VBQG4240 MOSFET datasheet

 VBQG4240 cross reference
 VBQG4240 equivalent finder
 VBQG4240 lookup
 VBQG4240 substitution
 VBQG4240 replacement

 

 
Back to Top

 


 
.