All MOSFET. VBQG7313 Datasheet

 

VBQG7313 Datasheet and Replacement


   Type Designator: VBQG7313
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.020(typ) Ohm
   Package: DFN2X2
 

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VBQG7313 Datasheet (PDF)

 ..1. Size:334K  cn vbsemi
 vbqg7313.pdf pdf_icon

VBQG7313

VBQG7313www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Typ.)ID (A)a Qg (Typ.) 100 % Rg Tested0.013 at VGS = 10 V 120.014 at VGS = 6 V 30 12 5 nC0.016 at VGS = 4.5 V 12APPLICATIONSDFN6(2*2) DC/DC Converters and Synchronous Buck Converters- Lower Ringing Voltage from Soft Turn-OnD -

 8.1. Size:1104K  cn vbsemi
 vbqg7322.pdf pdf_icon

VBQG7313

VBQG7322www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSDFN6(2X2) DC

Datasheet: VBQA3316 , VBQF1206 , VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , VBQF2309 , VBQG4240 , 20N60 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , VBTA4250N .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - VBQG7313 MOSFET datasheet

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