VBQG7313 Specs and Replacement

Type Designator: VBQG7313

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.020 typ Ohm

Package: DFN2X2

VBQG7313 substitution

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VBQG7313 datasheet

 ..1. Size:334K  cn vbsemi
 vbqg7313.pdf pdf_icon

VBQG7313

VBQG7313 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Typ.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.013 at VGS = 10 V 12 0.014 at VGS = 6 V 30 12 5 nC 0.016 at VGS = 4.5 V 12 APPLICATIONS DFN6(2*2) DC/DC Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On D -... See More ⇒

 8.1. Size:1104K  cn vbsemi
 vbqg7322.pdf pdf_icon

VBQG7313

VBQG7322 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DFN6(2X2) DC... See More ⇒

Detailed specifications: VBQA3316, VBQF1206, VBQF1303, VBQF1306, VBQF1310, VBQF2120, VBQF2309, VBQG4240, 20N60, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, VBTA4250N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.