All MOSFET. VBQG7322 Datasheet

 

VBQG7322 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQG7322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023(typ) Ohm
   Package: DFN2X2

 VBQG7322 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQG7322 Datasheet (PDF)

 ..1. Size:1104K  cn vbsemi
 vbqg7322.pdf

VBQG7322 VBQG7322

VBQG7322www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSDFN6(2X2) DC

 8.1. Size:334K  cn vbsemi
 vbqg7313.pdf

VBQG7322 VBQG7322

VBQG7313www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Typ.)ID (A)a Qg (Typ.) 100 % Rg Tested0.013 at VGS = 10 V 120.014 at VGS = 6 V 30 12 5 nC0.016 at VGS = 4.5 V 12APPLICATIONSDFN6(2*2) DC/DC Converters and Synchronous Buck Converters- Lower Ringing Voltage from Soft Turn-OnD -

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top