All MOSFET. VBQG8238 Datasheet

 

VBQG8238 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBQG8238
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
   Package: DFN2X2

 VBQG8238 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBQG8238 Datasheet (PDF)

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 vbqg8238.pdf

VBQG8238 VBQG8238

VBQG8238www.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.045 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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