VBQG8238 Specs and Replacement

Type Designator: VBQG8238

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.030 typ Ohm

Package: DFN2X2

VBQG8238 substitution

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VBQG8238 datasheet

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VBQG8238

VBQG8238 www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2 Package 0.030 at VGS = - 4.5 V -10a - 20 18 nC - Small Footprint Area 0.045 at VGS = - 2.5 V -9a - Low On-Resistance APPLICATIONS Load Switch, PA Switch, and Battery Switch for Portable Devi... See More ⇒

Detailed specifications: VBQF1303, VBQF1306, VBQF1310, VBQF2120, VBQF2309, VBQG4240, VBQG7313, VBQG7322, IRF540, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442

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