All MOSFET. VBQG8238 Datasheet

 

VBQG8238 Datasheet and Replacement


   Type Designator: VBQG8238
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.030(typ) Ohm
   Package: DFN2X2
 

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VBQG8238 Datasheet (PDF)

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VBQG8238

VBQG8238www.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.045 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevi

Datasheet: VBQF1303 , VBQF1306 , VBQF1310 , VBQF2120 , VBQF2309 , VBQG4240 , VBQG7313 , VBQG7322 , IRF540N , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , VBTA4250N , VBTA5220N , VBZ3442 .

History: OSG60R260IF | IPD230N06NG | AP3A010MT | IRF630NL | LSC65R180HT | AP04N60H-HF | HM2907

Keywords - VBQG8238 MOSFET datasheet

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