VBTA1220N Specs and Replacement

Type Designator: VBTA1220N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.270 typ Ohm

Package: SC75

VBTA1220N substitution

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VBTA1220N datasheet

 ..1. Size:232K  cn vbsemi
 vbta1220n.pdf pdf_icon

VBTA1220N

VBTA1220N www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) c Qg (TYP.) 100 % Rg tested 0.270 at VGS = 4.5 V 0.75 20 1.4 nC 0.390 at VGS = 2.5 V 0.70 APPLICATIONS Smart phones, tablet PC s - DC/DC converters - Boost converters - Load switch, OVP switch SC-75 D G 1 G 3 D S 2 Top Vie... See More ⇒

 9.1. Size:1003K  cn vbsemi
 vbta161k.pdf pdf_icon

VBTA1220N

001 VBTA161K www.VBsemi.com N-Channel 60V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 1.2 at VGS = 10 V 60 330 Low On-Resistance 2 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF SOT-523 Fast Switching Speed 25 ns SC-75 Low Input and Output Leakage TrenchFET Pow... See More ⇒

Detailed specifications: VBQF1306, VBQF1310, VBQF2120, VBQF2309, VBQG4240, VBQG7313, VBQG7322, VBQG8238, 50N06, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442, VBZ7001

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.