All MOSFET. VBTA1220N Datasheet

 

VBTA1220N Datasheet and Replacement


   Type Designator: VBTA1220N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.270(typ) Ohm
   Package: SC75
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VBTA1220N Datasheet (PDF)

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VBTA1220N

VBTA1220Nwww.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top Vie

 9.1. Size:1003K  cn vbsemi
 vbta161k.pdf pdf_icon

VBTA1220N

001VBTA161Kwww.VBsemi.comN-Channel 60V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = 10 V60 330 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pFSOT-523 Fast Switching Speed: 25 nsSC-75 Low Input and Output Leakage TrenchFET Pow

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5

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