All MOSFET. VBTA161K Datasheet

 

VBTA161K Datasheet and Replacement


   Type Designator: VBTA161K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT523
 

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VBTA161K Datasheet (PDF)

 ..1. Size:1003K  cn vbsemi
 vbta161k.pdf pdf_icon

VBTA161K

001VBTA161Kwww.VBsemi.comN-Channel 60V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = 10 V60 330 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pFSOT-523 Fast Switching Speed: 25 nsSC-75 Low Input and Output Leakage TrenchFET Pow

 9.1. Size:232K  cn vbsemi
 vbta1220n.pdf pdf_icon

VBTA161K

VBTA1220Nwww.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top Vie

Datasheet: VBQF1310 , VBQF2120 , VBQF2309 , VBQG4240 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , IRF640 , VBTA2245N , VBTA3230NS , VBTA3615M , VBTA4250N , VBTA5220N , VBZ3442 , VBZ7001 , VBZ84 .

History: SWP70N10V | RQJ0305EQDQA | STF10N95K5 | KRLML6401 | P057AAT | AON6266 | WFD5N60C

Keywords - VBTA161K MOSFET datasheet

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