All MOSFET. VBTA2245N Datasheet

 

VBTA2245N Datasheet and Replacement


   Type Designator: VBTA2245N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.450(typ) Ohm
   Package: SC75
 

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VBTA2245N Datasheet (PDF)

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VBTA2245N

VBTA2245Nwww.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) (nC) 100 % R tested0.450 at VGS = -4.5 V -0.55 Fast switching speed-20 0.500 at VGS = -2.5 V -0.50 10.600 at VGS = -1.8 V -0.38APPLICATIONS Load / power switch for portabledevicesS Drivers: relays, solenoids, displa

Datasheet: VBQF2120 , VBQF2309 , VBQG4240 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , IRFZ44 , VBTA3230NS , VBTA3615M , VBTA4250N , VBTA5220N , VBZ3442 , VBZ7001 , VBZ84 , VBZA4042 .

History: IXFT21N50F | AP75N07GS-HF | TSM3400CX | UTT6NP10G-S08-R | SIA537EDJ | APT1201R4SFLL | QM2N7002E3K1

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