All MOSFET. VBTA2245N Datasheet

 

VBTA2245N MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBTA2245N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.65 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.450(typ) Ohm
   Package: SC75

 VBTA2245N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBTA2245N Datasheet (PDF)

 ..1. Size:675K  cn vbsemi
 vbta2245n.pdf

VBTA2245N VBTA2245N

VBTA2245Nwww.VBsemi.comP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (TYP.) (nC) 100 % R tested0.450 at VGS = -4.5 V -0.55 Fast switching speed-20 0.500 at VGS = -2.5 V -0.50 10.600 at VGS = -1.8 V -0.38APPLICATIONS Load / power switch for portabledevicesS Drivers: relays, solenoids, displa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top