VBTA2245N Specs and Replacement

Type Designator: VBTA2245N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.450 typ Ohm

Package: SC75

VBTA2245N substitution

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VBTA2245N datasheet

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VBTA2245N

VBTA2245N www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) (nC) 100 % R tested 0.450 at VGS = -4.5 V -0.55 Fast switching speed -20 0.500 at VGS = -2.5 V -0.50 1 0.600 at VGS = -1.8 V -0.38 APPLICATIONS Load / power switch for portable devices S Drivers relays, solenoids, displa... See More ⇒

Detailed specifications: VBQF2120, VBQF2309, VBQG4240, VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, IRFZ44, VBTA3230NS, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442, VBZ7001, VBZ84, VBZA4042

Keywords - VBTA2245N MOSFET specs

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