All MOSFET. VBTA3230NS Datasheet

 

VBTA3230NS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBTA3230NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.3 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.300(typ) Ohm
   Package: SC89

 VBTA3230NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBTA3230NS Datasheet (PDF)

 ..1. Size:1009K  cn vbsemi
 vbta3230ns.pdf

VBTA3230NS VBTA3230NS

VBTA3230NSwww.VBsemi.comDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested0.360 at VGS = 4.5 V 0.6 Gate-Source ESD Protected: 1000 V0.420 at VGS = 2.5 V 0.420 0.750.520 at VGS = 1.8 V 0.20.720 at VGS = 1.5 V 0.05APPLICATIONS Load/Power Switching for Portable Devices

 9.1. Size:1186K  cn vbsemi
 vbta3615m.pdf

VBTA3230NS VBTA3230NS

VBTA3615Mwww.VBsemi.comDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested1.50 at VGS = 4.5V 0.1860 0.6 Gate-Source ESD Protected: 1000 V1.20 at VGS = 10V 0.20SC75-6APPLICATIONSS1 1 6 D1 Load/Power Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Ham

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