VBTA3230NS Specs and Replacement

Type Designator: VBTA3230NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.300 typ Ohm

Package: SC89

VBTA3230NS substitution

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VBTA3230NS datasheet

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 vbta3230ns.pdf pdf_icon

VBTA3230NS

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 vbta3615m.pdf pdf_icon

VBTA3230NS

VBTA3615M www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested 1.50 at VGS = 4.5V 0.18 60 0.6 Gate-Source ESD Protected 1000 V 1.20 at VGS = 10V 0.20 SC75-6 APPLICATIONS S1 1 6 D1 Load/Power Switching for Portable Devices Drivers Relays, Solenoids, Lamps, Ham... See More ⇒

Detailed specifications: VBQF2309, VBQG4240, VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, IRF640, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442, VBZ7001, VBZ84, VBZA4042, VBZA4407

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