VBTA3230NS Specs and Replacement
Type Designator: VBTA3230NS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 14 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.300 typ Ohm
Package: SC89
VBTA3230NS substitution
- MOSFET ⓘ Cross-Reference Search
VBTA3230NS datasheet
vbta3615m.pdf
VBTA3615M www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested 1.50 at VGS = 4.5V 0.18 60 0.6 Gate-Source ESD Protected 1000 V 1.20 at VGS = 10V 0.20 SC75-6 APPLICATIONS S1 1 6 D1 Load/Power Switching for Portable Devices Drivers Relays, Solenoids, Lamps, Ham... See More ⇒
Detailed specifications: VBQF2309, VBQG4240, VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, IRF640, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442, VBZ7001, VBZ84, VBZA4042, VBZA4407
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