All MOSFET. VBTA3615M Datasheet

 

VBTA3615M Datasheet and Replacement


   Type Designator: VBTA3615M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5(typ) Ohm
   Package: SC75-6
 

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VBTA3615M Datasheet (PDF)

 ..1. Size:1186K  cn vbsemi
 vbta3615m.pdf pdf_icon

VBTA3615M

VBTA3615Mwww.VBsemi.comDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested1.50 at VGS = 4.5V 0.1860 0.6 Gate-Source ESD Protected: 1000 V1.20 at VGS = 10V 0.20SC75-6APPLICATIONSS1 1 6 D1 Load/Power Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Ham

 9.1. Size:1009K  cn vbsemi
 vbta3230ns.pdf pdf_icon

VBTA3615M

VBTA3230NSwww.VBsemi.comDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested0.360 at VGS = 4.5 V 0.6 Gate-Source ESD Protected: 1000 V0.420 at VGS = 2.5 V 0.420 0.750.520 at VGS = 1.8 V 0.20.720 at VGS = 1.5 V 0.05APPLICATIONS Load/Power Switching for Portable Devices

Datasheet: VBQG4240 , VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , IRF1404 , VBTA4250N , VBTA5220N , VBZ3442 , VBZ7001 , VBZ84 , VBZA4042 , VBZA4407 , VBZA4409 .

History: HGP080N10S | HAT2291C | PMPB10UP | FDZ7296 | AM3407PE | PMV55ENEA | IRL3103D2PBF

Keywords - VBTA3615M MOSFET datasheet

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