VBTA4250N Datasheet. Specs and Replacement
Type Designator: VBTA4250N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 14 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.650 typ Ohm
Package: SC75-6
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VBTA4250N substitution
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VBTA4250N datasheet
vbta4250n.pdf
VBTA4250N www.VBsemi.com Dual P-Channel -20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected 1000 V 0.65 at VGS = -4.5 V -0.30 -20 0.75 0.84 at VGS = -2.5 V -0.25 1.20 at VGS = -1.8 V -0.18 APPLICATIONS Load/Power Switching for Portable Devices Drivers Relays, So... See More ⇒
Detailed specifications: VBQG7313, VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, IRLZ44N, VBTA5220N, VBZ3442, VBZ7001, VBZ84, VBZA4042, VBZA4407, VBZA4409, VBZA4410
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
