All MOSFET. VBTA4250N Datasheet

 

VBTA4250N MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBTA4250N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.3 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.650(typ) Ohm
   Package: SC75-6

 VBTA4250N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBTA4250N Datasheet (PDF)

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 vbta4250n.pdf

VBTA4250N VBTA4250N

VBTA4250Nwww.VBsemi.comDual P-Channel -20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected: 1000 V0.65 at VGS = -4.5 V -0.30-20 0.750.84 at VGS = -2.5 V -0.251.20 at VGS = -1.8 V -0.18APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, So

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