All MOSFET. VBTA4250N Datasheet

 

VBTA4250N Datasheet and Replacement


   Type Designator: VBTA4250N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.650(typ) Ohm
   Package: SC75-6
 

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VBTA4250N Datasheet (PDF)

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VBTA4250N

VBTA4250Nwww.VBsemi.comDual P-Channel -20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected: 1000 V0.65 at VGS = -4.5 V -0.30-20 0.750.84 at VGS = -2.5 V -0.251.20 at VGS = -1.8 V -0.18APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, So

Datasheet: VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , IRFB4110 , VBTA5220N , VBZ3442 , VBZ7001 , VBZ84 , VBZA4042 , VBZA4407 , VBZA4409 , VBZA4410 .

History: SIA425EDJ

Keywords - VBTA4250N MOSFET datasheet

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