VBTA4250N Datasheet and Replacement
Type Designator: VBTA4250N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.3 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.650(typ) Ohm
Package: SC75-6
VBTA4250N substitution
VBTA4250N Datasheet (PDF)
vbta4250n.pdf
VBTA4250Nwww.VBsemi.comDual P-Channel -20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected: 1000 V0.65 at VGS = -4.5 V -0.30-20 0.750.84 at VGS = -2.5 V -0.251.20 at VGS = -1.8 V -0.18APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, So
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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