VBTA4250N Spec and Replacement
Type Designator: VBTA4250N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.650(typ) Ohm
Package: SC75-6
VBTA4250N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBTA4250N Specs
vbta4250n.pdf
VBTA4250N www.VBsemi.com Dual P-Channel -20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested Gate-Source ESD Protected 1000 V 0.65 at VGS = -4.5 V -0.30 -20 0.75 0.84 at VGS = -2.5 V -0.25 1.20 at VGS = -1.8 V -0.18 APPLICATIONS Load/Power Switching for Portable Devices Drivers Relays, So... See More ⇒
Detailed specifications: VBQG7313 , VBQG7322 , VBQG8238 , VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , IRLZ44N , VBTA5220N , VBZ3442 , VBZ7001 , VBZ84 , VBZA4042 , VBZA4407 , VBZA4409 , VBZA4410 .
History: ZVN4310GTC | SL60N10Q | AP4438GYT | SSS5N90A
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
