All MOSFET. VBTA5220N Datasheet

 

VBTA5220N MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBTA5220N
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7(min) V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.1 nC
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SC75-6

 VBTA5220N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBTA5220N Datasheet (PDF)

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 vbta5220n.pdf

VBTA5220N VBTA5220N

VBTA5220Nwww.VBsemi.comN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.270 at VGS = 4.5 V 0.60 TrenchFET Power MOSFETN-Channel200.410 at VGS = 2.5 V0.55 100 % Rg Tested0.840 at VGS = - 4.5 V - 0.30 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.660

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFK120N65X2

 

 
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