VBTA5220N Specs and Replacement
Type Designator: VBTA5220N
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: SC75-6
VBTA5220N substitution
- MOSFET ⓘ Cross-Reference Search
VBTA5220N datasheet
vbta5220n.pdf
VBTA5220N www.VBsemi.com N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.270 at VGS = 4.5 V 0.60 TrenchFET Power MOSFET N-Channel 20 0.410 at VGS = 2.5 V 0.55 100 % Rg Tested 0.840 at VGS = - 4.5 V - 0.30 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.660 ... See More ⇒
Detailed specifications: VBQG7322, VBQG8238, VBTA1220N, VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, VBTA4250N, IRFB4110, VBZ3442, VBZ7001, VBZ84, VBZA4042, VBZA4407, VBZA4409, VBZA4410, VBZA4412
Keywords - VBTA5220N MOSFET specs
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