VBZ7001 Datasheet and Replacement
Type Designator: VBZ7001
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: SOT23
VBZ7001 substitution
VBZ7001 Datasheet (PDF)
vbz7001.pdf

VBZ7001www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Low Input Ca
Datasheet: VBTA1220N , VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , VBTA4250N , VBTA5220N , VBZ3442 , 10N60 , VBZ84 , VBZA4042 , VBZA4407 , VBZA4409 , VBZA4410 , VBZA4412 , VBZA4420 , VBZA4425 .
History: NCE60P25 | SSM4228GM | AP2605GY | WMN80R720S | HAT1097R | STN2300A | CJP04N65A
Keywords - VBZ7001 MOSFET datasheet
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History: NCE60P25 | SSM4228GM | AP2605GY | WMN80R720S | HAT1097R | STN2300A | CJP04N65A



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