All MOSFET. VBZ84 Datasheet

 

VBZ84 Datasheet and Replacement


   Type Designator: VBZ84
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: SOT23
 

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VBZ84 Datasheet (PDF)

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VBZ84

VBZ84www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3.5 at VGS = - 10 V - 1 to - 3 -400 High-Side Switching Low On-Resistance: 3.9 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Low Input

Datasheet: VBTA161K , VBTA2245N , VBTA3230NS , VBTA3615M , VBTA4250N , VBTA5220N , VBZ3442 , VBZ7001 , IRFB4227 , VBZA4042 , VBZA4407 , VBZA4409 , VBZA4410 , VBZA4412 , VBZA4420 , VBZA4425 , VBZA4430 .

History: FQT2P25TF | HY80N075T | SI6467BDQ

Keywords - VBZ84 MOSFET datasheet

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