VBZ84 Specs and Replacement
Type Designator: VBZ84
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: SOT23
VBZ84 substitution
- MOSFET ⓘ Cross-Reference Search
VBZ84 datasheet
vbz84.pdf
VBZ84 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition TrenchFET Power MOSFET - 60 3.5 at VGS = - 10 V - 1 to - 3 -400 High-Side Switching Low On-Resistance 3.9 Low Threshold - 2 V (typ.) Fast Swtiching Speed 20 ns (typ.) Low Input ... See More ⇒
Detailed specifications: VBTA161K, VBTA2245N, VBTA3230NS, VBTA3615M, VBTA4250N, VBTA5220N, VBZ3442, VBZ7001, AO3400, VBZA4042, VBZA4407, VBZA4409, VBZA4410, VBZA4412, VBZA4420, VBZA4425, VBZA4430
Keywords - VBZ84 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
