VBZA5670 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZA5670
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
VBZA5670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZA5670 Datasheet (PDF)
vbza5670.pdf
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VBZA5670www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.030 at VGS = 10 V 760 25 nC Optimized for Low Side Synchronous50.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL Inve
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .