VBZA5670 Specs and Replacement
Type Designator: VBZA5670
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
VBZA5670 substitution
- MOSFET ⓘ Cross-Reference Search
VBZA5670 datasheet
vbza5670.pdf
VBZA5670 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.030 at VGS = 10 V 7 60 25 nC Optimized for Low Side Synchronous 5 0.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL Inve... See More ⇒
Detailed specifications: VBZA4618, VBZA4800, VBZA4805, VBZA4850, VBZA4936, VBZA4946, VBZA4953, VBZA4953A, AO3401, VBZA6679, VBZA7240, VBZA7470, VBZA8858, VBZA9358, VBZA9410, VBZA9435, VBZA9926
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
