All MOSFET. VBZA5670 Datasheet

 

VBZA5670 Datasheet and Replacement


   Type Designator: VBZA5670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8
 

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VBZA5670 Datasheet (PDF)

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VBZA5670

VBZA5670www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.030 at VGS = 10 V 760 25 nC Optimized for Low Side Synchronous50.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL Inve

Datasheet: VBZA4618 , VBZA4800 , VBZA4805 , VBZA4850 , VBZA4936 , VBZA4946 , VBZA4953 , VBZA4953A , IRFP260 , VBZA6679 , VBZA7240 , VBZA7470 , VBZA8858 , VBZA9358 , VBZA9410 , VBZA9435 , VBZA9926 .

History: OSG95R500FF | TSM2N7000KCT

Keywords - VBZA5670 MOSFET datasheet

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